To even further improve its SiC technology, Infineon invested a great deal into testing on-state oxide reliability of electrically screened SiC MOSFETs along with the off state oxide stress due to electric field conditions in SiC power devices. Study all about how Infineon controls and assures the reliability of SiC https://www.facebook.com/permalink.php?story_fbid=pfbid02CgAiVhZ4NSBg2uWJKv63dv2DiJ5boogSePEZHkVQmLVuEt7nUkYQj8Xa9tQHUAS6l&id=61562415773754&__cft__[0]=AZU7soqQRdi0-0z9paHiW1AUpnanPyDpEYLt-mj6wO2WbgCSws1klflwE0lBk0y87B6A9V3KBp6FYTS22w3irYlKtuO6xSAJW6nKk3y26fZNbGhJ441al1yPgRjjzL8Uvm1zM-JEMjujjIbyNY-TSNPyxOJfJFXxRkiMbjEwtV87ZerSmjT9OzixT_TScDwp9IydE1dFym7njNtshdjIOhya&__tn__=%2CO%2CP-R